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Development of processing procedures for advanced silicon solar cellsTen ohm-cm silicon solar cells, 0.2 mm thick, were produced with short circuit current efficiencies up to thirteen percent and using a combination of recent technical advances. The cells were fabricated in conventional and wraparound contact configurations. Improvement in cell collection efficiency from both the short and long wavelengths region of the solar spectrum was obtained by coupling a shallow junction and an optically transparent antireflection coating with back surface field technology. Both boron diffusion and aluminum alloying techniques were evaluated for forming back surface field cells. The latter method is less complicated and is compatible with wraparound cell processing.
Document ID
19750009733
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Scott-Monck, J. A.
(Heliotek Sylmar, CA, United States)
Stella, P. M.
(Heliotek Sylmar, CA, United States)
Avery, J. E.
(Heliotek Sylmar, CA, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1975
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-134740
Report Number: NASA-CR-134740
Accession Number
75N17805
Funding Number(s)
CONTRACT_GRANT: NAS3-17350
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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