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Evaluation of semiconductor specimens by X-ray analysisGermanium and GaAs crystals were investigated for studies on photovoltaic effects, chemical etching and epitaxial growth according to the overall objective to assess the defect structure of single crystalline materials. A brief survey of basic theory and topographical techniques is provided; examples of topographs are presented.
Document ID
19750014086
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Walter, H. U. (Alabama Univ. Huntsville, AL, United States)
Date Acquired
September 3, 2013
Publication Date
March 1, 1975
Subject Category
Solid-State Physics
Report/Patent Number
NASA-CR-120729
Report Number: NASA-CR-120729
Accession Number
75N22158
Funding Number(s)
CONTRACT_GRANT: NAS8-29650
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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