Development of a 1000V, 200A, low-loss, fast-switching, gate-assisted turn-off thyristor

Feasibility was demonstrated for a thyristor that blocks 1000V forward and reverse, conducts 200A, and turns on in little more than 2 microsec with only 2A of gate drive. Its features include a turn-off time of 3 microsec achieved with 2A of gate assist current of a few microseconds duration and an energy dissipation of only 12 mJ per pulse for a 20 microsec half sine wave, 200A pulse. Extensive theoretical and experimental study of the electrical behavior of thyristors having a fast turn-off time have significantly improved the understanding of the physics of turning thyristor off. Thyristors of two new designs were fabricated and evaluated. The high speed and low power were achieved by a combination of gate amplification, cathode shunting, and gate-assisted turn-off. Two techniques for making this combination practical are described.