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Segregation effects during solidification in weightless meltsComputer programs are developed and used in the study of the combined effects of evaporation and solidification in space processing. The temperature and solute concentration profiles during directional solidification of binary alloys with surface evaporation were mathematically formulated. Computer results are included along with an econotechnical model of crystal growth. This model allows: prediction of crystal size, quality, and cost; systematic selection of the best growth equipment or alloy system; optimization of growth or material parameters; and a maximization of zero-gravity effects. Segregation in GaAs crystals was examined along with vibration effects on GaAs crystal growth. It was found that a unique segregation pattern and strong convention currents exist in GaAs crystal growth. Some beneficial effects from vibration during GaAs growth were discovered. The implications of the results in space processing are indicated.
Document ID
19750025064
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Li, C.
(Grumman Aerospace Corp. Bethpage, NY, United States)
Date Acquired
September 3, 2013
Publication Date
July 1, 1975
Subject Category
Astronautics (General)
Report/Patent Number
RE-507
NASA-CR-143981
Report Number: RE-507
Report Number: NASA-CR-143981
Accession Number
75N33137
Funding Number(s)
CONTRACT_GRANT: NAS8-29662
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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