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Heterojunction III-V alloy photodetectors for high-sensitivity 1.06-micrometers optical receiversIt is pointed out that currently promising technical developments related to the Nd-YAG laser technology at 1.06 micrometers cannot be implemented because of the absence of a suitable detector. Such a detector could possibly be provided in connection with new advances related to the development of the heterojunction III-V alloy photodiode. Details of detector requirements for the considered applications are discussed along with approaches to satisfy these requirements by an appropriate detector design.
Document ID
19750036122
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Eden, R. C.
(Rockwell International Science Center Thousand Oaks, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1975
Publication Information
Publication: IEEE
Subject Category
Electronics And Electrical Engineering
Accession Number
75A20194
Funding Number(s)
CONTRACT_GRANT: NAS5-23333
CONTRACT_GRANT: F33615-71-C-1744
CONTRACT_GRANT: F33615-74-C-1030
CONTRACT_GRANT: F33615-72-C-1013
CONTRACT_GRANT: NAS5-23134
Distribution Limits
Public
Copyright
Other

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