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Epitaxial technology for low cost solar cellsEpitaxial solar cell structures on low cost silicon substrates are compared to direct diffusion substrates. Dislocation density in the epitaxial layers is found to be significantly lower than that of the substrate material. The saturation current density of diodes epitaxially formed on the substrate is commonly 2 to 3 orders of magnitude lower than for diodes formed by direct diffusion. Solar cells made epitaxially are substantially better than those made by direct diffusion into similar material.
Document ID
19760005399
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kressel, H.
(RCA Labs. Princeton, NJ, United States)
Raccah, P. M.
(Yeshiva Univ. New York, United States)
Date Acquired
August 8, 2013
Publication Date
July 25, 1975
Publication Information
Publication: JPL Proc. of the 1st ERDA Semiann. Solar Photovoltaic Conversion Program Conf.
Subject Category
Energy Production And Conversion
Accession Number
76N12487
Funding Number(s)
CONTRACT_GRANT: NSF AER-74-15532
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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