Enhanced crystallinity of low temperature deposited silicon films on graphite subtrates

The previously developed technique of a sandwich coating for silicon crystallinity enhancement in silicon films deposited at low temperature is applied to graphite substrates. The measured increase in silicon crystallinity is comparable to that observed earlier using a quartz substrate. The distribution of aluminum in the silicon films is determined using Auger spectroscopic depth profiling. Carbon diffusion from the substrate into the silicon film is shown to be negligible at a substrate temperature of 600 C.