Electrostatic analysis of charge-coupled structures

An analysis is presented which is based upon a numerical solution of Gauss's law for the multiple dielectric semiconductor and electrode structure. The formulation resulted in a large set of equations, usually nonlinear, which were solved by an iterative scheme based upon the Gauss-Seidel method employing a relaxation parameter. Proper consideration of the nonlinearity of the space-charge in the semiconductor allowed convergent solutions which can give reasonable approximations to the channel potential profiles though not as good for estimating the space charge itself. The results of this work, which are three computer programs, are listed. None of the programs give the electric field explicitly as output data. However, when this information is desired, the programs can be expanded to include field estimations based on a polynominal fit to the potential field, or they may serve as subprograms for main programs dealing with general aspects of charge transfer.