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A theoretical study of heterojunction and graded band gap type solar cellsThe theory of heterojunction and graded bandgap solar cells was studied to help determine the material compositions and device dimensions needed for high efficiency solar cells. Because of the involved analysis of the fundamental equations describing solar cell operation, a general numerical device analysis program was used. A major part of the initial work was involved in modifying an existing silicon solar cell analysis program to account for the unique features of graded bandgap and heterojunction solar cells. The most successful III-V solar cells have so far been constructed in the GaAs and Gal-xAlxAs material systems; this project was concerned with such solar cells. The most efficient solar cell so far evaluated is an abrupt heterojunction cell with a pure AlAs layer at the surface with a GaAs substrate. The predicted efficiency for this cell is slightly larger than that of a graded bandgap Gal-xAlxAs solar cell.
Document ID
19760014597
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Hauser, J. R.
(North Carolina State Univ. Raleigh, NC, United States)
Sutherland, J. E.
(North Carolina State Univ. Raleigh, NC, United States)
Date Acquired
September 3, 2013
Publication Date
March 1, 1976
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-146840
Report Number: NASA-CR-146840
Accession Number
76N21685
Funding Number(s)
CONTRACT_GRANT: NSG-1116
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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