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III-V photocathode with nitrogen doping for increased quantum efficiencyAn increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.
Document ID
19760024321
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
James, L. W.
(Varian Associates Palo Alto, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
August 31, 1976
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Number: NASA-CASE-NPO-12134-1
Patent Application Number: US-PATENT-APPL-SN-536785
Patent Number: US-PATENT-3,978,360
Accession Number
76N31409
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-12134-1|US-PATENT-3,978,360
Patent Application
US-PATENT-APPL-SN-536785
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