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Complementary DMOS/VMOS integrated-circuit-structureComplementary metal-oxide-semiconductor (CMOS) structure has relatively high speed, high breakdown voltage, high transconductance and high packing densities.
Document ID
19770000340
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Jhabvala, M. D.
Date Acquired
August 8, 2013
Publication Date
March 1, 1977
Publication Information
Publication: NASA Tech Briefs
Volume: 2
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
GSC-12190
Report Number: GSC-12190
ISSN: 0145-319X
Accession Number
77B10340
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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