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Thick-film materials for silicon photovoltaic cell manufactureThick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.
Document ID
19770010622
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Field, M. B.
(Owens-Illinois, Inc. Toledo, OH, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1977
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-135134
Report Number: NASA-CR-135134
Accession Number
77N17566
Funding Number(s)
CONTRACT_GRANT: NAS3-19441
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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