NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login

Press Enter or click the Search button to begin your search.

Back to Results
Contract to design, fabricate and test an Electron Bombarded Semiconductor (EBS) deviceThe characteristics of the low resistivity diode and the double epitaxial style diode are reported. Both met required breakdown voltage and capacitance voltage characteristics. The double epitaxial style diodes are expected to improve target efficiencies.
Document ID
19770012372
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Arnold, R. L. (Watkins-Johnson Co. Palo Alto, CA, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1976
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-152457
Report Number: NASA-CR-152457
Accession Number
77N19316
Funding Number(s)
CONTRACT_GRANT: NAS5-20881
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available