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Process for preparing liquid metal electrical contact deviceThe parts of an electrical contact device are treated by sputter etching to remove the parent metal oxide. Prior to exposure of the electrodes to any oxygen, a sacrificial metal is sputter deposited on the parts. Preferably this sacrificial metal is one that oxidizes slowly and is readily dissolved by the liquid metal. The sacrificial metal may then be removed from unwanted areas. The remainder of the ring and the probe to be wet by the liquid metal are submerged in the liquid metal or the liquid metal is flushed over these areas, preferably while they are being slightly abraded, unitl all the sacrificial material on these portions is wet by the liquid metal. In doing so the liquid metal dissolves the sacrificial metal and permanently wets the parent metal. Preferred materials used in the process and for the electrodes of electrical contact devices are high purity (99.0%) nickel or AISI type 304 stainless steel for the electrical contact devices, gallium as the liquid metal, and gold as the sacrificial material.
Document ID
19770019441
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Lovell, R. R.
(NASA Lewis Research Center Cleveland, OH, United States)
Berkopec, F. D.
(NASA Lewis Research Center Cleveland, OH, United States)
Culp, D. H.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 8, 2013
Publication Date
May 17, 1977
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-708658
Patent Number: NASA-CASE-LEW-11978-1
Patent Number: US-PATENT-4,023,266
Accession Number
77N26385
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-LEW-11978-1|US-PATENT-4,023,266
Patent Application
US-PATENT-APPL-SN-708658
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