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Tunnel injection into gate oxide trapsAn experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.
Document ID
19770036910
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Maserjian, J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kaw, R. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Collier, J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1975
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Annual Symposium on Reliability physics 1975
Location: Las Vegas, NV
Start Date: April 1, 1975
End Date: April 3, 1975
Accession Number
77A19762
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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