Field ionization device used for measuring the pulse height defect of He/+/ in silicon

A neutral particle detector using field ionization and liquid-nitrogen-cooled solid state detectors has been developed to investigate the pulse height defect of low energy He(+) ions in silicon. The field ionization tip is fabricated from a short length of tungsten wire; a typical detector is of the surface-barrier Si type with a thin Au window and low capacitance (about 15 pF); the assembly is mounted in a cylindrical vacuum chamber which is pumped to about 10 to the -6th torr. As an example, pulse height distributions for He(+) and H(+) taken at tip bias of 25.7 kV are presented. The detected energy of the H and He ions are studied as a function of the actual energies of accelerated ions, for a detector having a gold front conducting surface layer of 32 micrograms/sq cm.