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JAN transistor and diode characterization test program, JANTX diode 1N5619A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point, and highest reading.
Document ID
19780003355
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Takeda, H. (DCA Reliability Lab. Sunnyvale, CA, United States)
Date Acquired
September 3, 2013
Publication Date
February 1, 1977
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-150462
Report Number: NASA-CR-150462
Accession Number
78N11298
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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