Secondary electron emission from a dielectric film subjected to an electric field

An electric field in the range of 0.3,3.3 kV/mm is created normal to a thin film FEP teflon sample which accumulates potential of up to 8.8, 13.7 or 18.3 kV when exposed to an electron beam having energy of 10.0, 15.0 or 20.0 kV, respectively. It is found that the secondary electron emission from the charged sample varies with field. The threshold voltage, at which the secondary electron emission coefficient sigma is unity, drops down from a low field value of 13.73 kV to a high field value of 13.11 kV for a 15.0 kV beam. A computational technique was developed that generates equipotential lines or contours and field vectors above a plane where potential is known. The utilization of conformal transformations allows the extension of the technique to configurations which map into a plane.