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Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures, phase 3The etch-back epitaxy process is described for producing thin, graded composition GaAlAs layers. The palladium-aluminum contact system is discussed along with its associated problems. Recent solar cell results under simulated air mass zero light and at elevated temperatures are reported and the growth of thin polycrystalline GaAs films on foreign substrates is developed.
Document ID
19780004587
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Blakeslee, A. E.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Hovel, H. J.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Woodall, J. M.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1977
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-145268
Report Number: NASA-CR-145268
Accession Number
78N12530
Funding Number(s)
CONTRACT_GRANT: NAS1-12812
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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