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High voltage, high current Schottky barrier solar cellA Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.
Document ID
19780005583
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Stirn, R. J.
(JPL)
Date Acquired
September 3, 2013
Publication Date
October 11, 1977
Subject Category
Energy Production And Conversion
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-495021
Patent Number: NASA-CASE-NPO-13482-1
Patent Number: US-PATENT-4,053,918
Accession Number
78N13526
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-NPO-13482-1|US-PATENT-4,053,918
Patent Application
US-PATENT-APPL-SN-495021
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