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Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbideExperience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.
Document ID
19780011293
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Prost, L.
(NASA Headquarters Washington, DC United States)
Pauillac, A.
(NASA Headquarters Washington, DC United States)
Date Acquired
September 3, 2013
Publication Date
March 1, 1978
Subject Category
Inorganic And Physical Chemistry
Report/Patent Number
NASA-TM-75268
Report Number: NASA-TM-75268
Accession Number
78N19236
Funding Number(s)
CONTRACT_GRANT: NASW-2790
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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