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Delayed fracture of silicon: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array projectBar specimens were cut from ingots of single crystal silicon, and acid etched prior to testing. Artificial surface flaws were introduced in specimens by indentation with a Knoop hardness tester. The specimens were loaded in four-point bending to 95 percent of the nominal fracture stress, while keeping the surface area, containing the flaw, wet with test liquids. No evidence of delayed fracture, and, therefore stress corrosion, of single crystal silicon was observed for liquid environments including water, acetone, and aqueous solutions of NaCl, NH4OH, and HNO3, when tested with a flaw parallel to a (110) surface. The fracture toughness was calculated.
Document ID
19780020663
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Chen, T. J.
(California Univ. Los Angeles, CA, United States)
Knapp, W. J.
(California Univ. Los Angeles, CA, United States)
Date Acquired
September 3, 2013
Publication Date
March 31, 1978
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-157313
Report Number: NASA-CR-157313
Accession Number
78N28606
Funding Number(s)
CONTRACT_GRANT: JPL-954836
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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