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Lift-off procedure improves pattern definitionLayer of TiO2, economically deposited during integrated circuit fabrication, allows "nonpattern" metal to be removed cleanly.
Document ID
19790000287
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hovel, H. J.
(IBM Corp.)
Huggins, H. A.
(IBM Corp.)
Date Acquired
August 10, 2013
Publication Date
December 1, 1979
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-12392
ISSN: 0145-319X
Report Number: LAR-12392
Accession Number
79B10287
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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