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CdInP semiconductor alloySemiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.
Document ID
19790000491
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
LAR-12405
ISSN: 0145-319X
Report Number: LAR-12405
Accession Number
79B10491
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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