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Multilevel metallization method for fabricating a metal oxide semiconductor deviceAn improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.
Document ID
19790006735
Acquisition Source
Legacy CDMS
Document Type
Other - Patent
Authors
Hollis, B. R., Jr. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Feltner, W. R. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Bouldin, D. L. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Routh, D. E. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
September 3, 2013
Publication Date
September 5, 1978
Subject Category
Solid-State Physics
Report/Patent Number
Patent Application Number: US-PATENT-APPL-SN-814005
Patent Number: NASA-CASE-MFS-23541-1
Patent Number: US-PATENT-4,111,775
Accession Number
79N14906
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-CASE-MFS-23541-1|US-PATENT-4,111,775
Patent Application
US-PATENT-APPL-SN-814005

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