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Transistor step stress testing program for JANTX2N2905AThe effect of power/temperature step stress when applied to the transistor JANTX2N2905A manufactured by Texas Instruments and Motorola is reported. A total of 48 samples from each manufacturer was submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests outlined in Table 2 after completing the prior power/temperature step stress point.
Document ID
19790010024
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161116
Report Number: NASA-CR-161116
Accession Number
79N18195
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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