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Diode step stress program for JANTX1N5554Data were compiled for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices. The switching diode JANTX1N5554 is examined.
Document ID
19790010025
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161117
Report Number: NASA-CR-161117
Accession Number
79N18196
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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