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Diode step stress testing program for JANTX1N5550The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5550 manufactured by Semtech and Micro Semiconductor. The power/temperature stress tests are presented, and failure analyses are included.
Document ID
19790010026
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161118
Report Number: NASA-CR-161118
Accession Number
79N18197
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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