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Diode step stress testing program for JANTX1N937bThe effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N937B manufactured by Motorola and Siemens. Test results, and failure analyses are included.
Document ID
19790010027
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161119
Report Number: NASA-CR-161119
Accession Number
79N18198
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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