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Transistor step stress testing program for JANTX2N4856The effect of power/temperature step stress when applied to a field effect transistor JANTX2N4856 manufactured by Texas Instruments and Teledyne was evaluated. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control units were maintained for verification of the electrical parametric testing.
Document ID
19790010029
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161121
Report Number: NASA-CR-161121
Accession Number
79N18200
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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