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Transistor step stress program for JANTX2N4150Reliability analysis of the transistor JANTX2N4150 manufactured by General Semiconductor and Transitron is reported. The discrete devices were subjected to power and temperature step stress tests and then to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented.
Document ID
19790010033
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161125
Report Number: NASA-CR-161125
Accession Number
79N18204
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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