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Diode step stress program for JANTX1N2970bData for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.
Document ID
19790010038
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161130
Report Number: NASA-CR-161130
Accession Number
79N18209
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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