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Diode step stress program for JANTX1N5415Diode JANTX1N5415 was tested to evaluate the reliability of these devices from different manufacturers, and to gain more knowledge of stress testing. The tests for determining power/temperature step stresses are described, and the test results are discussed. Failure analyses for power stress, and temperature stress are presented.
Document ID
19790010039
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161131
Report Number: NASA-CR-161131
Accession Number
79N18210
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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