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Diode step stress program for JANTX1N5417The effect of power/temperature step stress was studied when applied to the diode JANTX1N5417 manufactured by Micro Semiconductor and Semtech. Test results and failure analyses are included.
Document ID
19790010043
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161135
Report Number: NASA-CR-161135
Accession Number
79N18214
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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