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Diode step stress program for JANTX1N645-1The diode JANTX1N645-1 manufactured by Semtech and Micro Semiconductor was subjected to power/temperature step stress in order to assess its reliability. All test samples were subjected to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented in tabular form.
Document ID
19790010046
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161138
Report Number: NASA-CR-161138
Accession Number
79N18217
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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