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Diode step stress program for JANTX1N3893Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
Document ID
19790010049
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161141
Report Number: NASA-CR-161141
Accession Number
79N18220
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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