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Diode step stress testing program for JANTX1N2989BThe effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.
Document ID
19790010076
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161157
Report Number: NASA-CR-161157
Accession Number
79N18247
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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