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Transistor step stress program for JANTX2N2945AData compiled for the purpose of evaluating the effect of power/temperature step stress when applied to the transistor JANTX2N2945A manufactured by Raytheon and Teledyne is presented. A total of 48 samples from each manufacturer was divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control units were maintained for verification of the electrical parametric testing.
Document ID
19790010082
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161113
Report Number: NASA-CR-161113
Accession Number
79N18253
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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