Transister step stress testing program for JANTX2N3811

The effect was studied of power/temperature step stress when applied to the dual transistor JANTX2N3811 manufactured by Motorola and National Semiconductor. A total of 48 samples from Motorola and 47 from National Semiconductor was submitted to the processes. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.