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Transistor step stress testing program for JANTX2N2484The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured by Raytheon and Teledyne was evaluated. Forty-eight samples from each manufacturer were divided equally (16 per group) into three groups and submitted to the processes outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
Document ID
19790010085
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-161153
Report Number: NASA-CR-161153
Accession Number
79N18256
Funding Number(s)
CONTRACT_GRANT: NAS8-31944
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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