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Gallium-doped germanium, evaluation of photoconductors, part 1Gallium-doped germanium far infrared detectors were evaluated at low temperatures and low background simulating the space environment. Signal and noise characteristics were determined for detector temperatures in the 2K to 4K range. Optimum performance occurs at about 2.5K for all devices tested. The minimum average NEP in the 40-130 micron region was found to be approximately 4 x 10 to the minus 17th power watt Hz(-1/2) at a frequency of 1 Hz.
Document ID
19790016704
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Moore, W. J. (Naval Research Lab. Washington, DC, United States)
Date Acquired
September 4, 2013
Publication Date
April 12, 1979
Subject Category
Solid-State Physics
Report/Patent Number
NRL-MR-3939-PT-1
NASA-CR-152222
Report Number: NRL-MR-3939-PT-1
Report Number: NASA-CR-152222
Accession Number
79N24875
Funding Number(s)
CONTRACT_GRANT: NASA ORDER RA-32035-B
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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