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Process feasibility study in support of silicon material, task 1Analyses of process system properties were continued for materials involved in the alternate processes under consideration for semiconductor silicon. Primary efforts centered on physical and thermodynamic property data for dichlorosilane. The following property data are reported for dichlorosilane which is involved in processing operations for solar cell grade silicon: critical temperature, critical pressure, critical volume, critical density, acentric factor, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity and density. Work was initiated on the assembly of a system to prepare binary gas mixtures of known proportions and to measure the thermal conductivity of these mixtures between 30 and 350 C. The binary gas mixtures include silicon source material such as silanes and halogenated silanes which are used in the production of semiconductor silicon.
Document ID
19790018316
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Li, K. Y.
(Lamar Univ. Beaumont, TX, United States)
Hansen, K. C.
(Lamar Univ. Beaumont, TX, United States)
Yaws, C. L.
(Lamar Univ. Beaumont, TX, United States)
Date Acquired
September 3, 2013
Publication Date
June 1, 1979
Subject Category
Energy Production And Conversion
Report/Patent Number
DOE/JPL-954343-79/15
NASA-CR-158726
QTPR-15
Report Number: DOE/JPL-954343-79/15
Report Number: NASA-CR-158726
Report Number: QTPR-15
Accession Number
79N26487
Funding Number(s)
CONTRACT_GRANT: JPL-954343
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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