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Physical processes in directed ion beam sputteringThe general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.
Document ID
19790018772
Acquisition Source
Legacy CDMS
Document Type
Thesis/Dissertation
Authors
Robinson, R. S.
(Colorado State Univ. Fort Collins, CO, United States)
Date Acquired
September 3, 2013
Publication Date
March 1, 1979
Subject Category
Plasma Physics
Report/Patent Number
NASA-CR-159567
Report Number: NASA-CR-159567
Accession Number
79N26943
Funding Number(s)
CONTRACT_GRANT: NSG-3086
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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