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Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array ProjectSeveral 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.
Document ID
19790018810
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Schmid, F.
(Crystal Systems, Inc. Salem, MA, United States)
Khattak, C. P.
(Crystal Systems, Inc. Salem, MA, United States)
Date Acquired
September 3, 2013
Publication Date
April 1, 1979
Subject Category
Solid-State Physics
Report/Patent Number
NASA-CR-158734
DOE/JPL-954373-79/10
QPR-2
Report Number: NASA-CR-158734
Report Number: DOE/JPL-954373-79/10
Report Number: QPR-2
Accession Number
79N26981
Funding Number(s)
CONTRACT_GRANT: JPL-954373
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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