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LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski GrowthThe design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.
Document ID
19790023589
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Fiegl, G.
(Siltec Corp. Menlo Park, CA, United States)
Date Acquired
September 3, 2013
Publication Date
July 1, 1979
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-162178
DOE/JPL-954886-79/3
QR-7
Report Number: NASA-CR-162178
Report Number: DOE/JPL-954886-79/3
Report Number: QR-7
Accession Number
79N31760
Funding Number(s)
CONTRACT_GRANT: JPL-954886
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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