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Applications of ion implantation to high performance, radiation tolerant silicon solar cellsProgress in the development of ion implanted silicon solar cells is reported. Effective back surface preparation by implantation, junction processing to achieve high open circuit voltages in low-resistivity cells, and radiation tolerance cells are among the topics studied.
Document ID
19790024477
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kirkpatrick, A. R. (Spire Corp. Bedford, MA, United States)
Minnucci, J. A. (Spire Corp. Bedford, MA, United States)
Matthei, K. W. (Spire Corp. Bedford, MA, United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1979
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979
Subject Category
Energy Production And Conversion
Accession Number
79N32648
Funding Number(s)
CONTRACT_GRANT: NAS3-21276
CONTRACT_GRANT: NAS3-20823
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19790024469Collected WorksSolar Cell High Efficiency and Radiation Damage, 1979
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