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Model for MOS field-time-dependent breakdownA quantitative model for MOS breakdown is derived and correlated with experiments. The data were obtained by enhancing the effect of ion emission on breakdown through controlled ion-implantation damage prior to gate oxidation in an otherwise normal and clean MOS process
Document ID
19790037722
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Li, S. P. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Prussin, S. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1978
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Reliability physics 1978
Location: San Diego, CA
Start Date: April 18, 1978
End Date: April 20, 1978
Accession Number
79A21735
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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