A note on photocurrents in extrinsic semiconductors

The advent of the concept of holes and careful determination of mobilities have made it possible to realize that the potential difference between the contacts of an irradiated semiconductor in the absence of current flow is due to the difference in mobility of electrons and holes. In this paper, a preliminary analysis shows that charge neutrality and zero-current condition are compatible. This situation is clarified and it is found that the equation for the electric field E in the absence of current is not absolutely correct even under low-level injection conditions. In particular, it is shown that fairly large currents can be generated by suitable light sources, currents which are entirely due to the disparity between electron and hole mobilities.