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JANTX2N2060 dual transistorReport describes effects of power and temperature overstress on Motorola and Raytheon devices. Motorola devices were weak in power overstress. Raytheon devices succumbed to 160 hour temperature stress. Failure modes are detailed.
Document ID
19800000018
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Date Acquired
August 10, 2013
Publication Date
August 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-25251
ISSN: 0145-319X
Report Number: MFS-25251
Accession Number
80B10018
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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