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JANTX2N2945A transistorReport describes effects of power and temperature overstress on Raytheon and Teledyne devices. Increasing T in 16 hour steps damaged both manufacturers' lots. Raytheon lot exceeded 50 percent failure rate 160 hours before completion of test due to current gain failure. Teledyne samples completed test but had more catastrophic failures.
Document ID
19800000026
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Date Acquired
August 10, 2013
Publication Date
August 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-25259
ISSN: 0145-319X
Report Number: MFS-25259
Accession Number
80B10026
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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